FCBGA Package: Core-less with Thin Film Layers

 

 

     Fine Line E-Performance
         
High performance  flip chip  devices usually  require single-ended and/or differential pairs transmission lines with tight  control  over impedance. When the flip chip device I/O count increases and/or its  pitch becomes  smaller, the substrate  lines  and spaces  have to be decreased  accordingly. However,  decreasing  the  line  width  requires a reduction  in  the  dielectric  Z-spacing  to  its  ground   reference,  and/or  reduction  in the dielectric  constant  value  of the insulating material. Further  more,  without lowering the dielectric constant  values  of  the  insulating  material  between  lines, cross-talk  may cause unacceptable  signal attenuation in  narrowed  lines.  AMITEC uses a low K (2.55) insulating material in the thin film section of the core-less substrate,  enabling < 20µm lines  and  spaces  with  50ohm impedance values and acceptable attenuation over high frequency range.
           

Cross talk vs. frequency: Low K Dielectric Enables lower Spaces Between Lines. Chart is given for  εr=2.55 and Line/Space=22µm

   
  
  

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